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savantic semiconductor product specification silicon pnp power transistors 2sB546 description with to-220c package complement to type 2sd401 collector current i c =-2a collector-base voltage v cbo =-200v applications for use in general purpose power amplifier,vertical output application pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -200 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -5 v i c collector current -2 a p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2sB546 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -150 v v (br)cbo collector-base breakdown voltage i c =-0.5ma; i e =0 -200 v v (br)ebo emitter-base breakdown votage i e =-0.5ma; i b =0 -5 v v cesat collector-emitter saturation voltage i c =-500m a;i b =-50m a -1.0 v i cbo collector cut-off current v cb =-150v; i e =0 -50 a i ebo emitter cut-off current v eb =-5v; i c =0 -50 a h fe dc current gain i c =-0.4a ; v ce =-10v 40 240 f t transition frequency i c =-0.4a ; v ce =-10v 5 mhz h fe classifications r o y 40-80 70-140 120-240
savantic semiconductor product specification 3 silicon pnp power transistors 2sB546 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2sB546

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